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Growth of CdS and CdTe thin film semiconductors and fabrication of CdS/CdTe solar cells

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dc.contributor.author Kumarasinghe, K.D.M.S.P.K.
dc.contributor.author de Silva, D.S.M.
dc.contributor.author Pathiratne, K.A.S.
dc.contributor.author Dharmadasa, I.M.
dc.contributor.author Salim, H.I.
dc.contributor.author Abdul-Manaf, N.A.
dc.contributor.author Ravirajan, P.
dc.contributor.author Balashangar, K.
dc.date.accessioned 2016-01-19T09:09:01Z
dc.date.available 2016-01-19T09:09:01Z
dc.date.issued 2015
dc.identifier.citation Kumarasinghe, K.D.M.S.P.K., De Silva, D.S.M., Pathiratne, K.A.S., Dharmadasa, I.M., Salim, H.I., Abdul-Manaf, N.A., Ravirajan, P. and Balashangar, K. 2015. Growth of CdS and CdTe thin film semiconductors and fabrication of CdS/CdTe solar cells, p. 194, In: Proceedings of the International Postgraduate Research Conference 2015 University of Kelaniya, Kelaniya, Sri Lanka, (Abstract), 339 pp. en_US
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/11248
dc.description.abstract Thin films of CdS and CdTe semiconductor materials were electrodeposited onto glass/fluorine doped tin oxide conducting glass surfaces using a potentiostat/galvanostat equipped with a three electrode cell. Aqueous electrolytic bath containing CdCl2 and (NH4)2S2O3 was used for the electrodeposition of CdS thin films. CdTe thin films were electrodeposited onto glass/FTO/CdS substrates from aqueous solution having high concentrations of CdSO4 and low concentrations of TeO2 and CdCl2. The glass/FTO/CdS/CdTe/Cu-Au solar cell devices were prepared by thermal evaporation of Cu and Au on CdTe surface. CdS films grown were annealed at ~400 °C for 15 minutes in air and photo-electro chemical (PEC) cell measurements were performed to identify the electrical conductivity type. Both as-deposited and annealed CdS layers were identified as n-type in electrical conduction. CdS thin films were shown enhanced PEC responses upon heat treatment. The respective band gap values for as-deposited and heat treated CdS were 2.35±0.05 eV and 2.40±0.05 eV which were close to the band gap of bulk CdS. XRD analysis of as-deposited CdS layers revealed the presence of hexagonal CdS materials with the major peak arising from (002) plane. Following the CdTe deposition on glass/FTO/CdS substrate, the surface of CdTe layers were coated with a 0.1% CdCl2 solution and structures were annealed at ~400°C for 10 minutes in air. Band gaps for CdTe layers were found to be 1.45±0.02 eV for both as-deposited and annealed samples which exhibited the band gap of bulk CdTe. There was a little improvement in cubic (220) and (311) peaks of XRD spectra of annealed CdTe layers compared to the as-deposited material, but annealing exhibited a small reduction of cubic phase preferential orientation (111). SEM images showed that CdS and CdTe layers were fairly uniform. The fabricated solar cell devices showed the efficiency of 2.1% with Voc ~330 mV, Jsc~20 mA cm-2 and FF~33% under the illumination of air mass (AM) 1.5 conditions (100 mW/cm2, 1 Sun). en_US
dc.language.iso en en_US
dc.publisher Faculty of Graduate Studies, University of Kelaniya en_US
dc.subject Thin films en_US
dc.subject Semiconductors en_US
dc.subject Solar cells en_US
dc.title Growth of CdS and CdTe thin film semiconductors and fabrication of CdS/CdTe solar cells en_US
dc.type Article en_US


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