Abstract:
Tin oxide (SnO2) is a promising photoactive semiconducting material due to its optoelectronics properties. Even though, growth of SnO2 using the method of electrodeposition is advantageous, it has paved low attention among semiconductor researchers. In this study, well-adhered photoactive SnO2 thin film was successfully electrodeposited on Cu substrates. The growth parameters, such as film deposition potential, bath temperature, and duration of deposition were optimized. Electrodeposition of SnO2 layers was performed on copper substrates in a threeelectrode electrochemical cell using a solution containing 30 mM SnCl2 and 150 mM HNO3 at a deposition potential of -0.85 V vs. Ag/AgCl. The fabricated best thin film resulted JSC value of 410 �A cm-2 and VOC value of 113 mV in 0.1 M NaNO3 electrolyte. The best thin film obtained at a bath temperature of 85◦ C for a deposition time of 120 seconds. The Mott-Schottky analysis revealed that the fabricated SnO2 thin film exhibits n-type conductivity, and it has a flat band potential of -0.51 V vs. Ag/AgCl.
