Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.
(Materials Science and Engineering: B, 1994)
In this paper it is shown experimentally, for the first time, that the ideality factor n for the extrinsic base surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is unity and is bias ...