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Multilevel nanoimprint lithography

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dc.contributor.author Alkaisi, M.M. en_US
dc.contributor.author Jayatissa, N.W.K. en_US
dc.contributor.author Konijn, M. en_US
dc.date.accessioned 2014-11-19T04:44:43Z
dc.date.available 2014-11-19T04:44:43Z
dc.date.issued 2004
dc.identifier.issn 1567-1739 en_US
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/3996
dc.description.abstract Multilevel and three-dimensional (3D) patterning eliminates more complicated steps in the fabrication processes of micro and nanoscale structures. Multiple lithography processes with inter-level alignment or single lithography with multi layer resist is essential for three-dimensional patterning. Nanoimprint lithography has demonstrated the potential of 3D patterning in a single step. A number of 3D structures have found immediate applications in a range of microelectronic systems such as microoptics, microelectromechanical systems, and monolithic microwave integrated circuits [Appl. Phys. Lett. 78 (2000) 3322; Appl. Phys. Lett. 79 (2001) 2285]. In this work, electron beam lithography (EBL) with different doses followed by reactive ion etching (RIE) is employed in the fabrication of multilevel structures of SixNy molds. The multi level patterns have been transferred into the mold in single step RIE. The imprint process has been performed below the glass transition temperature of the polymer. This may alleviate the alignment errors due to different thermal expansion coefficients in various materials. en_US
dc.publisher Current Applied Physics en_US
dc.subject Multilevel lithography; Silicon nitride molds; Low temperature nanoimprint en_US
dc.title Multilevel nanoimprint lithography
dc.type article en_US
dc.identifier.department Physics en_US


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