Citation:RP Wijesundara, W Siripala, KD Jayasuriya, SRD Kalingamudali, KTL De Silva, JKDS Jayanetti, AP Samantilleke and IM Dharmadasa, 1999, Growth and characterisation of CuInS2 thin films, Proc. Wkshp. Low Cost Elect. Mat. and Solar Cells, Peradeniya, Sri Lanka, pp. 40-45
Date:1999
Abstract:
Copper Indium Disulphide thin films were grown by electrodeposition of Cu-ln alloy followed by sulphurisation in H2S gas. It was observed that the ionic concentration of Cu2+/ In3+ in the electrodepositing bath determines the composition of the materials formed after the sulphurisation. CuInS2 thin
films having the chalcopyrite crystal structure can be produced using this technique and the films are n-type semiconductors.
