Electronic Band Gap States in Electrodeposited Cuprous Oxide Semiconductors

dc.contributor.author	Wijesundera, R.P.	en_US
dc.contributor.author	Kodiweera, N.A.C.	en_US
dc.contributor.author	Siripala, W.	en_US
dc.contributor.author	Garuthara, R.	en_US
dc.date.accessioned	2014-11-19T04:46:01Z
dc.date.available	2014-11-19T04:46:01Z
dc.date.issued	2004
dc.identifier.citation	RP Wijesundera, NKAC Kodiweera, W Siripala, and R Garuthara, 2004, Electronic Band Gap States in Electrodeposited Cuprous Oxide Semiconductors, Proc. 20th Tech. Sess. Inst. Phys., Sri Lanka, pp. 75-80
dc.identifier.uri
dc.identifier.uri	http://repository.kln.ac.lk/handle/123456789/4100
dc.description.abstract	Using the electrodeposition technique Cu20 thin films of n-type conductivity was deposited on ITO substrates. It was observed that the doping density of the films were very sensitive to the deposition potential. The photoluminescence study revealed that the electronic gap states present in the band gap are only the states originated due to the oxygen vacancies. These vacancies resulted doner levels producing the n-type conductivity in the electrodeposited cuprous oxide thin films. Scanning Electron Micrographs and Absorption Spectrums are similar to reported p-type films. Photoresponse of the films clearly indicated the n-type behavior of electrodeposited cuprous oxide thin film in a photoelctrochemical cell.	en_US
dc.title	Electronic Band Gap States in Electrodeposited Cuprous Oxide Semiconductors
dc.type	Conference_item	en_US
dc.identifier.department	Physics	en_US