Optical and Structural Characrerization of Electrodeposited CuInSe2 thin films

Abstract

CuInSe2 thin films were prepared on ITO coated glass substrates by electrodeposition from aqueous solution containing 0.005 M CuCl2 0.005 SeO2 and 0.01 M InCl3 at room temperature for a period of 30 minutes. To obtain better quality films, samples were annealed at different temperatures (200 0C, 350 0C and 500 0C) in Ar. XRD, optical absorption measurements, photovoltage measurements, spectral measurements and reflectance measurements were performed to characterize the films. According to the results, CuInSe2 is a p-type semiconductor. XRD shows three sharp CuInSe2 peaks of (112), (200) and (116) reflections for the samples annealed at 200 0C and 350 oC.Photovoltage of samples annealed at 400 0C and 500 0C were negligible (alomost zero). For the sample annealed at 200 0C, photovoltage was around 10 ? 15 mV. The highest photovoltage of around 150 mV was shown by the sample annealed at 350 0C. According to optical absorption measurements and reflectance measurements, the direct band gap was around 1.1 eV for both samples annealed at 200 0C and 350 0C. Only the sample annealed at 350 0C gave spectral responses.