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Fabrication of Cu2O Homojunction Solar Cell

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dc.contributor.author Gunawardhana, L.K.A.D.D.S.
dc.contributor.author Wijesundera, R.P.
dc.contributor.author Siripala, W.
dc.date.accessioned 2015-06-26T06:23:24Z
dc.date.available 2015-06-26T06:23:24Z
dc.date.issued 2013
dc.identifier.citation Gunawardhana, L.K.A.D.D.S., Wijesundera, R.P. and Siripala, W., 2013. Fabrication of Cu2O Homojunction Solar Cell, Proceedings of the Annual Research Symposium 2013, Faculty of Graduate Studies, University of Kelaniya, pp 92. en_US
dc.identifier.uri http://www.kln.ac.lk/ars-2013/
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/8589
dc.description.abstract Cu2O, a natural p-type semiconductor with a narrow band gap of 2 eV, is an attractive material for photovoltaic devices because of its nontoxicity and low production cost. In early investigations, p-Cu2O/metal Schottky junctions or p-Cu2O/n-type semiconductor heterojunctions were reported due to the absence of n-Cu2O. Cu2O homojunction attracts much attention with the invention of possibility of growth of the n-type Cu2O in 1986 by the method of electrodeposition. Recently, p-n Cu2O homojunction solar cells were fabricated by the electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer, in which the highest cell efficiency was reported to be 1.06%. However, performances of reported Cu2O homojunction solar cells are poor compared to the theoretical efficiency of 12%. It has been understood that one of the options to improve the Cu2O homojunction solar cell would be the formation of p- layer on top of the n-layer. In this study, the possibility of consecutive electrodeposition of p-Cu2O layer on n-Cu2O layer was examined to fabricate n-p Cu2O homojunction , which has not been reported earlier. The electrodeposition of Cu2O was studied in a three electrode electrochemical cell, under a potentiostatic condition of -200 mV Vs Ag/AgCl at 55o C. n-Cu2O films were cathodically deposited on Ti substrates in an aqueous solution of 0.1 M sodium acetate and 0.01 M cupric acetate for 60 min. Prior to the deposition of n-Cu2O, the solutions were adjusted to a pH 6.12 of using HCl. In order to fabricate an n-p homojunction, the electrodeposition of p-Cu2O was carried out on top of the previously deposited n-Cu2O layer. p-Cu2O was electrodeposited in an aqueous solution of 0.1 M sodium acetate and 0.001 M cupric acetate for 40 min. n-p Cu2O homojunction was characterized by using dark and light current-voltage measurements and spectral response measurements in a PEC containing 0.1 M sodium acetate solution. Dark and light current-voltage measurements and spectral response measurements reveal that the photoactivity of the device enhances due to the formation of n-p Cu2O homojunction. In conclusion, the study reveals the possibility of fabrication of n-p Cu2O homojunction by electrodeposition. en_US
dc.language.iso en en_US
dc.publisher University of Kelaniya en_US
dc.title Fabrication of Cu2O Homojunction Solar Cell en_US
dc.type Article en_US


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