dc.contributor.author |
Gunawardhana, L.K.A.D.D.S. |
|
dc.contributor.author |
Wijesundera, R.P. |
|
dc.contributor.author |
Siripala, W. |
|
dc.date.accessioned |
2015-06-26T06:23:24Z |
|
dc.date.available |
2015-06-26T06:23:24Z |
|
dc.date.issued |
2013 |
|
dc.identifier.citation |
Gunawardhana, L.K.A.D.D.S., Wijesundera, R.P. and Siripala, W., 2013. Fabrication of Cu2O Homojunction Solar Cell, Proceedings of the Annual Research Symposium 2013, Faculty of Graduate Studies, University of Kelaniya, pp 92. |
en_US |
dc.identifier.uri |
http://www.kln.ac.lk/ars-2013/ |
|
dc.identifier.uri |
http://repository.kln.ac.lk/handle/123456789/8589 |
|
dc.description.abstract |
Cu2O, a natural p-type semiconductor with a narrow band gap of 2 eV, is an attractive material for photovoltaic devices because of its nontoxicity and low production cost. In early investigations, p-Cu2O/metal Schottky junctions or p-Cu2O/n-type semiconductor heterojunctions were reported due to the absence of n-Cu2O. Cu2O homojunction attracts much attention with the invention of possibility of growth of the n-type Cu2O in 1986 by the method of electrodeposition. Recently, p-n Cu2O homojunction solar cells were fabricated by the electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer, in which the highest cell efficiency was reported to be 1.06%. However, performances of reported Cu2O homojunction solar cells are poor compared to the theoretical efficiency of 12%. It has been understood that one of the options to improve the Cu2O homojunction solar cell would be the formation of p- layer on top of the n-layer. In this study, the possibility of consecutive electrodeposition of p-Cu2O layer on n-Cu2O layer was examined to fabricate n-p Cu2O homojunction , which has not been reported earlier.
The electrodeposition of Cu2O was studied in a three electrode electrochemical cell, under a potentiostatic condition of -200 mV Vs Ag/AgCl at 55o C. n-Cu2O films were cathodically deposited on Ti substrates in an aqueous solution of 0.1 M sodium acetate and 0.01 M cupric acetate for 60 min. Prior to the deposition of n-Cu2O, the solutions were adjusted to a pH 6.12 of using HCl. In order to fabricate an n-p homojunction, the electrodeposition of p-Cu2O was carried out on top of the previously deposited n-Cu2O layer. p-Cu2O was electrodeposited in an aqueous solution of 0.1 M sodium acetate and 0.001 M cupric acetate for 40 min. n-p Cu2O homojunction was characterized by using dark and light current-voltage measurements and spectral response measurements in a PEC containing 0.1 M sodium acetate solution.
Dark and light current-voltage measurements and spectral response measurements reveal that the photoactivity of the device enhances due to the formation of n-p Cu2O homojunction.
In conclusion, the study reveals the possibility of fabrication of n-p Cu2O homojunction by electrodeposition. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
University of Kelaniya |
en_US |
dc.title |
Fabrication of Cu2O Homojunction Solar Cell |
en_US |
dc.type |
Article |
en_US |