Physics: Recent submissions

Now showing items 161-180 of 247

Growth and Characterisation of CuInS2 Thin Films

Wijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.; Samantilleke, A.P.; Dharmadasa, I.M. (1999)

Copper Indium Disulphide thin films were grown by electrodeposition of Cu-ln alloy followed by sulphurisation in H2S gas. It was observed that the ionic concentration of Cu2+/ In3+ in the electrodepositing bath determines ...
Fabrication and Characterisation of CuinS2/ZnSe/Metal Structures for Solar Cell Applications

Kalingamudali, S.R.D.; Wijesundera, R.P.; Gunatunga, N.P.; Siripala, W.; Jayasuriya, K.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S. (2000)

Thin film solar cell structure of Ti/CuInS2/ZnSe/Metal was fabricated using simple electrochemical and sulphurisation techniques. Copper lndium Disulphide (CuInS2 thin films were prepared by sulphurisation of Cu-In alloy ...
Electronic Scoreboard for Basketball games

Kalingamudali, S.R.D.; Dedigamuwa, G.S. (2002)

An electronic scoreboard has bean designed and fabricated for the basketball game. Although this has been specifically designed for the basketbaU game. this can also be used for other games such as Rugby. Hockey, Boxing ...
Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistors

Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C. (Materials Science and Engineering: B, 1994)

In this paper it is shown experimentally, for the first time, that the ideality factor n for the extrinsic base surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is unity and is bias ...
Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Roberts, J.S. (Applied Physics Letters, 1994)

Reduction of the surface recombination current components in Npn AlGaAs/GaAs heterojunction bipolar transistors has been achieved by overgrowing the emitter?mesas with an AlGaAs layer approximately 0.5 ?m thick. It was ...
Recombination current reduction in AlGaAs/GaAs heterojunction bipolar transistors with polyimide deposition

Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C. (Solid State Electronics, 1994)

N-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter-mesa diameters have been fabricated to examine the effects on the recombination current with polyimide deposition. The recombination current in these ...
Perimeter and bulk recombination currents in GaAs homojunction diodes and heterojunction bipolar transistors after surface processing

Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Wight, D.R. (Solid State Electronics, 1997)

The emitter-mesa surface (perimeter) and emitter-base bulk recombination currents, in heterojunction bipolar transistors (HBTs), are known to degrade device performance at low applied voltages, where these currents dominate. ...
Remote Controlling and Monitoring System to Control Electric Circuitry through SMS using a Microcontroller

Kalingamudali, S.R.D.; Harambearachchi, J.C.; Kumara, L.S.R.; de Silva, J.H.S.R.; Rathnayaka, R.M.C.R.K.; Piyasiri, G.; Indika, W.A.N.; Kumara, H.A.D.P.S.S.; Fernando, M.R.D.B. (2006)

Mobile phones have become one of the most popular communication devices among most of the people around the world, and short message service (SMS) is popular among mobile phone users as a cheap and convenient method of ...
Pedestrian and vehicular traffic friendly uninterrupted solar powered traffic signal light system

Kalingamudali, S.R.D.; Harambearachchi, J.C.; Kumara, L.S.R.; de Silva, J.H.S.R.; Piumwardena, D.D.F.; de Silva, L.D.L.; Abeynanda, L.T.; Chameera, K.H.G.G.; Dissanayake, D.P.; Attenayake, A.M.C.R.; Molligoda, S.A.G.N. (2006)

During power failures and power cuts road users suffer immense difficulties due to non-availability of traffic signal lights all over the world. Use of solar cells with lead acid accumulators to provide required power and ...
Design of an Inexpensive GPIB Interfaced Voltage Source

Kalingamudali, S.R.D.; Jayasingha, A.M.R. (2006)

An inexpensive voltage source that can be controlled by a computer using the general purpose interface bus (GPIB) controller is designed since commercially available GPIB interfaced voltage sources are very expensive. The ...
Characterization of CuInS2 thin films prepared by electrodeposition and sulfurization with photoluminescence spectroscopy

Garuthara, R.; Wijesundera, R.P.; Siripala, W. (Solar Energy Materials and Solar Cells, 2003)

Potentiostatic electrodeposition and sulfurization techniques were used to prepare polycrystalline CuInS2 thin films. X-ray diffraction and photoresponse measurements in a photoelectrochemical cell (PEC) revealed that ...
Preparation of CuInS2 thin films by electrodeposition and sulphurisation for applications in solar cells

Wijesundera, R.P.; Siripala, W. (Solar Energy Materials and Solar Cells, 2004)

Thin films of copper indium disulphide (CuInS2) were grown on Ti substrates by sulpherisation of Cu?In precursors prepared by sequentially electrodeposited Cu and In layers. CuInS2 films were characterised using X-ray ...
Metal-insulator transition induced by electronic and structural modulations in oxygen-deficient perovskite-type TbBaCo2O5.5

Hidaka, M.; Soejima, M.; Wijesundera, R.P.; Soda, M.; Sato, M.; Choi Sun-Hee; Sung, N.E.; Kim, M.G.; Lee, J.M. (Physica Status Solidi b (basic solid state physics), 2006)

The metal?insulator (M?I) transition at about 340 K (TMI) in TbBaCo2O5.5 has been investigated by X-ray absorption spectra near Tb-LIII, Ba-LII, and Co-K edges. In the metallic and insulating phases, the high-density ...
Order-disorder transitions of t2g-orbitals of V3+ ions and incommensurate structural deformations in the metallic spinel CuV2S4

Hidaka, M.; Tokiwa, N.; Wijesundera, R.P.; Awaka, J.; Nagata, S.; Park, Y.J.; Lee, K.B. (Physica Status Solidi b (basic solid state physics), 2007)

Structural transitions of the spinel CuV2S4 have been studied by means of X-ray diffraction using synchrotron radiation. The temperature dependence of reflections forbidden in a cubic spinel structure of Fd3m suggests that ...
Correlation between the Izumiyama porcelain ceramics and the red-overglaze enamels of the Kakiemon-style porcelains

Kajihara, S.; Hidaka, M.; Wijesundera, R.P.; Kumara, L.S.R.; Kobayashi, H.; Koga, M.; Tsuru, T.; Koga, K.; Shimomura, K.; Choi Jae-Young; Sung, N.E.; Park, Y.J. (Ceramics International, 2008)

The Kakiemon-style porcelains made from 17th century at Arita are famous Japanese porcelains, characterized mainly by their colored underglaze and overglaze and by their original design of coloring spatial patterns in the ...
Structural properties of the red-color overglaze for the HIZEN porcelains produced in the early Edo period of Japan

Hidaka, M.; Ohashi, K.; Kajihara, S.; Wijesundera, R.P.; Kumara, L.S.R.; Choi Jae-Young; Sung, N.E. (Ceramics International, 2009)

HIZEN porcelains made in 1650s to 1750s (early Edo period) in Arita areas sited in south Japan (SAGA) are famous Japanese porcelains, which are characterized by elegant and bright colors in the overglaze and the underglaze. ...
Growth of CuInS2 thin films by annealing Cu-In stack layers with elemental sulphur for photovoltaic applications

Pathirana, W.M.P.R.; Wijesundera, R.P.; Siripala, W. (2009)

Copper Indium Disulphide (CuInS2) is a promising material as an absorber layer in photovoltaic devices since it has a direct band gap of 1.5 eV and a high absorption coefficient. Among CuInS2 preparation techniques, ...
Correlation Between Local Structures and Partial Electronic Band States in Ferroelectric Bi4?Xlaxti3o12; 0.0?X?1.46

Hidaka, M.; Wijesundera, R.P.; Kumara, L.S.R.; Noguchi, Y.; Miyayama, M.; Choi Sun-Hee; Sung, N.E.; Kim, M.G. (Ceramics-Silik�ty, 2009)

The local structures and the partial band states near a Fermi level (EF) have been studied at room temperature in the ferroelectric phase of Bi4?XLaXTi3O12 (BLT) with 0.00?x?1.46 by means of X?ray absorption spectra (XAS) ...
Structural properties of the red-color overglazes on the Kakiemon-style porcelains produced in the later 17th century by means of X-ray diffraction (I)

Hidaka, M.; Horiuchi, H.; Ohashi, K.; Wijesundera, R.P.; Kumara, L.S.R.; Choi Jae-Young; Park, Y.J. (Cer�mica, 2009)

Kakiemon-style porcelains produced at Arita areas (SAGA) in Kyushu Island are famous Japanese porcelains. The porcelain-techniques creating its elegant and bright red-color underglaze and overglaze were found and developed ...
Local structures and electronic band states of ?-Fe2O3 polycrystalline particles included in the red-color overglazes and the transparent glazes of the Kakiemon-style porcelains by means of X-ray absorption spectra (II)

Hidaka, M.; Horiuchi, H.; Ohashi, K.; Wijesundera, R.P.; Kumara, L.S.R.; Sung, N.E. (Cer�mica, 2009)

Kakiemon-style porcelain is mainly characterized by the porcelain body of white color or milky-white color and the elegant and bright patterns of the colored overglazes on its white body. The porcelains were first developed ...

Recently added

Physics: Recent submissions

Search Digital Repository

Browse

All of DSpace

This Collection

My Account